PART |
Description |
Maker |
2673000501 |
Lower Frequencies < 50 MHz
|
Fair-Rite Products Corp.
|
BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
2661000101 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
AD6649 AD6649BCPZ AD6649BCPZRL7 AD6649EBZ |
IF Diversity Receiver IF sampling frequencies to 400 MHz
|
Analog Devices
|
BAR17 |
RF switch RF attenuator for frequencies above 1 MHz Low distortion factor
|
TY Semiconductor Co., Ltd
|
MRF6S21050L |
The MRF6S21050L is designed for W鈥揅DMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA,
|
MOTOROLA
|
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
CLY5 Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|